HFA08TB60PBF Rectifier Diode fast recovery rectifier diodes
bridge rectifier circuit
,signal schottky diode
Stock Offer (Hot Sell)
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HFA08TB60PbF Vishay High Power Products
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
TO-220AC
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the HFA08TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery.
The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes.
The HEXFRED HFA08TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
PRODUCT SUMMARY
| VR | 600 V |
| VF at 8 A at 25 °C | 1.7 V |
| IF(AV) | 8 A |
| trr (typical) | 18 ns |
| TJ (maximum) | 150 °C |
| Qrr (typical) | 65nC |
| dI(rec)M/dt (typical) | 240 A/µs |
| IRRM | 5.0 A |
ABSOLUTE MAXIMUM RATINGS
| PARAMETER | SYMBOL | TEST CONDITIONS | VALUES | UNITS |
| Cathode to anode voltage | VR | 600 | V | |
| Maximum continuous forward current | IF | TC = 100 °C | 8 | A |
| Single pulse forward current | IFSM | 60 | A | |
| Maximum repetitive forward current | IFRM | 24 | A | |
| Maximum power dissipation | PD | TC = 25 °C | 36 | W |
| TC = 100 °C | 14 | W | ||
| Operating junction and storage temperature range | TJ, Tstg | - 55 to + 150 | °C |
Reverse Recovery Parameter Test Circuit
Reverse Recovery Waveform and Definitions
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| Image | Part # | Description | |
|---|---|---|---|
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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