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Home > products > Electronic IC Chips > STPS2045CT schottky rectifier diode diode rectifier circuit Rectifier Diode POWER SCHOTTKY RECTIFIER

STPS2045CT schottky rectifier diode diode rectifier circuit Rectifier Diode POWER SCHOTTKY RECTIFIER

manufacturer:
Manufacturer
Description:
Diode Array 1 Pair Common Cathode 45 V 10A Through Hole TO-220-3
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Repetitive Peak Reverse Voltage:
45 V
RMS Forward Current:
30 A
Surge Non Repetitive Forward Current:
180 A
Repetitive Peak Reverse Current:
1 A
Non Repetitive Peak Reverse Current:
2 A
Storage Temperaturerange:
-65 To +175 °C
Highlight:

bridge rectifier circuit

,

signal schottky diode

Introduction

 

STPS2045CT/CF/CG

POWER SCHOTTKY RECTIFIER

 

MAIN PRODUCT CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

45 V

Tj (max)

175 °C

VF (max)

0.57 V

 

FEATURES AND BENEFITS

  • VERY SMALL CONDUCTION LOSSES
  • NEGLIGIBLESWITCHING LOSSES
  • EXTREMELY FAST SWITCHING
  • INSULATED PACKAGE: ISOWATT220AB
    •  Insulatingvoltage = 2000V DC
    •   Capacitance= 12pF

DESCRIPTION

Dual center tap Schottky rectifiersuited for SwitchMode Power Supply and high frequencyDC to DC converters.

Packaged either in TO-220AB, ISOWATT220AB or D2 PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

 

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 45 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward current δ = 0.5 TO-220AB D2 PAK Tc = 155°C

Per diode

Per device

10

20

A
ISOWATT220AB Tc = 125°C
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
IRRM Repetitive peak reverse current

tp = 2 µs square

F = 1kHz

1 A
IRSM Non repetitive peak reverse current tp = 100 ms square 2 A
Tstg Storage temperaturerange -65 to +175 °C
Tj Maximum operatingjunction temperature* 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs

* : dPtot / dTj < 1/ Rth(j−a) thermal runaway conditionfor a diode on its own heatsink

 

 

 

 

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