RF Integrated Circuit Chip BYG23M-E3/TR Ultrafast Avalanche SMD Rectifier
diode rectifier circuit
,signal schottky diode
RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
| PARAMETER | SYMBOL | BYG23M | UNIT |
| Device marking code | BYG23M | ||
| Maximum repetitive peak reverse voltage | VRRM | 1000 | V |
| Average forward current TA = 65 °C | IF(AV) | 1.5 | A |
|
Peak forward surge current 10 ms single half sine-wave superimposed on rated load |
IFSM | 30 | A |
|
Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C |
ER | 20 | mJ |
| Operating junction and storage temperature range | TJ, TSTG | - 55 to + 150 | C |
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
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