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Home > products > Electronic IC Chips > TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

manufacturer:
Manufacturer
Description:
Infrared (IR) Emitter 940nm 1.35V 100mA 16mW/sr @ 100mA 50° Radial, 3mm Dia (T-1)
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union,Paypal
Specifications
Features:
• Package Type: Leaded
Features2:
• Package Form: T-1
Features3:
• Dimensions (in Mm): ∅ 3
Features4:
• Peak WaveleCM GROUPh: λp = 940 Nm
Features5:
• High Reliability
Features6:
High Radiant Power
Highlight:

diode rectifier circuit

,

bridge rectifier circuit

Introduction

TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

 

 

FEATURES                                 

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): ∅ 3

• Peak waveleCM GROUPh: λp = 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 25°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

 

 

DESCRIPTION

TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

 

APPLICATIONS

• Infrared remote control units

• Free air transmission systems

• Infrared source for optical counters and card readers

 

ORDERING INFORMATION
ORDERING CODE  PACKAGING    REMARKS  PACKAGE FORMtr (ns)
TSAL4400  Bulk  MOQ: 5000 pcs, 5000 pcs/bulk  T-1

 

 

Note

Test conditions see table “Basic Characteristics“

PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSAL4400 30 ± 25 940 800

 

 

 

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