N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board
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N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board
30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
Absolute Maximum Ratings TA=25o C unless otherwise noted
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID |
Drain Current – Continuous (Note 1a) – Pulsed |
14.5 | A |
| 50 | |||
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
| 1.5 | |||
| 1 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +150 | °C |
Thermal Characteristics
| RθJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | W/°C |
| RθJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 |
Package Marking and Ordering Information
| Device Marking | Device | Reel Size | Tape width | Quantity |
| FDS6676AS | FDS6676AS | 13“ | 12MM | 2500 units |
| FDS6676AS | FDS6676AS_NL | 13” | 12MM | 2500 units |
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes
| Image | Part # | Description | |
|---|---|---|---|
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
|