STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
manufacturer:
Manufacturer
Description:
N-Channel 60 V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
VDS:
60V
VGS:
± 20V
Ptot:
3.3W
Dv/dt:
10 V/ns
EAS:
200mJ
Tstg:
-55 To 150°C
Highlight:
electronics ic chip
,integrated circuit ic
Introduction
STN3NF06
N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
| TYPE | VDSS | RDS(on) | ID |
| STN3NF06 | 60 V | < 0.1 Ω | 4 A |
■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ AVALANCHE RUGGED TECHNOLOGY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low onresistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufact
-uring reproducibility.
APPLICATIONS
■ DC-DC & DC-AC COVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 60 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at TC = 25°C | 4 | A |
| ID | Drain Current (continuous) at TC = 100°C | 2.9 | A |
| IDM(•) | Drain Current (pulsed) | 16 | A |
| Total Dissipation at TC = 25°C | 3.3 | W | |
| Ptot | Derating Factor | 0.026 | W/°C |
| dv/dt (1) | Peak Diode Recovery voltage slope | 10 | V/ns |
| EAS (2) | Single Pulse Avalanche Energy | 200 | mJ |
| Tstg | Storage Temperature | -55 to 150 | °C |
| Tj | Operating Junction Temperature |
(•) Pulse width limited by safe operating area.
(1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
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