2SD2227STPW 50V DC 0.15A General Purpose Transistor NPN Type Single Configuration
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 50 V 150 mA 250MHz 300 mW Through Hole SPT
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union ， ESCROW
Specifications
Transistor Polarity:
NPN
Collector- Emitter Voltage VCEO Max:
50V
Collector- Base Voltage VCBO:
60V
Emitter- Base Voltage VEBO:
12V
Maximum DC Collector Current:
0.15A
Gain Bandwidth Product FT:
250 MHz
Maximum Operating Temperature:
+ 150 C
DC Current Gain HFE Max:
1200 At 1 MA At 5 V
Highlight:
resistor equipped transistor
,epitaxial planar pnp transistor
Introduction
2SD2227S NPN PNP Transistors General Purpose Transistor 50V 0.15A
MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)
Features
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
| Product Attribute | Attribute Value |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 50V |
| Collector- Base Voltage VCBO: | 60V |
| Emitter- Base Voltage VEBO: | 12V |
| Maximum DC Collector Current: | 0.15A |
| Gain Bandwidth Product fT: | 250 MHz |
| Maximum Operating Temperature: | + 150 C |
| DC Current Gain hFE Max: | 1200 at 1 mA at 5 V |
| Continuous Collector Current: | 0.15A |
| Pd - Power Dissipation: | 300 mW |
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