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Home > products > Electronic IC Chips > BTS621L1 Electronic IC Components Smart Two Channel Highside Power Switch Analog IC

BTS621L1 Electronic IC Components Smart Two Channel Highside Power Switch Analog IC

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Electronic IC Chips
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Specifications
Vbb(AZ):
43V
Vbb(on):
5.0 ... 34 V
Tstg:
-55 ...+150°C
Tj:
-40 ...+150°C
Highlight:

BTS621L1

,

BTS621L1 Electronic IC Component

,

Two Channel Highside Power Switch

Introduction

BTS621L1
Smart Two Channel Highside Power Switch

 

 

Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output

• Open load detection in ON-state
• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

 


 

 

 


Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage Vbb 43 V
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Vbb 34 V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI 3) = 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
VLoad dump4) 60 V
Load current IL self-limited A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC ≤ 25 °C Ptot 75 W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const
one channel, IL = 4.4 A, ZL = 32 mH, 0 Ω: both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 Ω:
EAS 395
790
mJ
Electrostatic discharge capability (ESD)
(Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD 1.0
2.0
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IINIST
-10 ... +16
±2.0
±5.0
V
mA


 

 


 

 

 

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