NE5532P Electronic IC Chips Small Scale Dual Low Noise Operational Amplifier IC
NE5532P Electronic IC Chips
,NE5532P Electronic IC Chips
,Low Noise Operational Amplifier IC
NE5532P Electronics Components Chip IC Electronics
DUAL LOW-NOISE OPERATIONAL AMPLIFIERS
A part of stock list
| C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
| C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
| ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
| TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
| C.I SCC2691AC1D24 | 1149+ | SOP-24 | |
| C.I TP3057WM | TI | XM33AF | SOP-16 |
| C.I CD14538BE | TI | 33ADS8K | DIP-16 |
| C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
| C.I SN75179BP | TI | 57C50DM | DIP-8 |
| C.I L6219DS | ST | 135 | SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
| C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
| RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
| C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
| RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
| TRIAC BTA26-600BRG | ST | 628 | TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
FEATURES
Equivalent Input Noise Voltage 5 nV/√Hz Typ at 1 kHz
Unity-Gain Bandwidth . . . 10 MHz Typ
Common-Mode Rejection Ratio . . . 100 dB Typ
High dc Voltage Gain . . . 100 V/mV Typ
Peak-to-Peak Output Voltage Swing 32 V Typ
With VCC± = ±18 V and RL = 600 Ω
High Slew Rate . . . 9 V/µs Typ
Wide Supply-Voltage Range . . . ±3 V to ±20 V
GENERAL DESCRIPTION
The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Absolute maximum ratings
Supply voltage (see Note 1): VCC+. . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V
Input voltage, either input (see Notes 1 and 2) VCC± . . . . -22V
Input current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of output short circuit (see Note 4) Unlimited . . . . . . . . . . . . . . . Package thermal impedance,
θJA (see Notes 5 and 6): D package 97 . . . . . . . . . . . . . . . . . . . . . . . . . . . . °C/W
P package 85 . . . . . . . . . . . . . . . . . . . . . . . . . . . . °C/W PS
package 95 . . . . . . . . . . . . . . . . . . . . . . . . . . . °C/W
Operating virtual junction temperature, TJ 150°C
Storage temperature range, Tstg −65 °C to 150°C