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Home > products > Flash Memory IC Chip > M74HCT14B1 Electronics Components electronic devices and integrated circuits HEX SCHMITT INVERTER

M74HCT14B1 Electronics Components electronic devices and integrated circuits HEX SCHMITT INVERTER

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Category:
Flash Memory IC Chip
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Specifications
Supply Voltage:
-0.5 To +7 V
DC Input Voltage:
-0.5 To VCC + 0.5 V
DC Input Diode Current:
± 20 MA
Power Dissipation:
500 MW
Storage Temperature:
-65 To +150 ℃
Lead Temperature (10 Sec):
300 ℃
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Introduction

 

M74HCT14B1 Electronics Components electronic devices and integrated circuits HEX SCHMITT INVERTER

 

M54HCT14

M74HCT14

HEX SCHMITT INVERTER

 

• HIGH SPEED

 tPD = 16 ns (TYP.) AT VCC =5V 

• LOW POWER DISSIPATION

  ICC = 1 µA (MAX.) AT TA = 25 °C

• HIGH NOISE IMMUNITY

  VH = 0.7 V (TYP.) AT VCC =5V

• OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

• SYMMETRICAL OUTPUT IMPEDANCE

︱IOH︱ = IOL = 4 mA (MIN.)

• BALANCED PROPAGATION DELAYS

 tPLH = tPHL

• PIN AND FUNCTION COMPATIBLE WITH 54/74LS14

 

DESCRIPTION

The M54/74HCT14 is a high speed CMOS HEX SCHMITT INVERTER fabricated in silicon gate C2 MOS technology. It has the same highspeed performance of LSTTL combined with true CMOS low power consumption. Pin configuration and function are the same as those of the HCT04 but all inputs have 0.7 V hysteresis level.This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2 MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption.All inputs are equipped with pro

 

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7 V
VI DC Input Voltage -0.5 to VCC + 0.5 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current ± 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Source Sink Current Per Output Pin ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
PD Power Dissipation 500 (*) mW
Tstg Storage Temperature -65 to +150
TL Lead Temperature (10 sec) 300

Absolute MaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.

(*) 500 mW: ≅ 65 ℃ derate to 300 mW by 10mW/℃: 65 ℃ to 85 ℃

 

INPUT AND OUTPUT EQUIVALENT CIRCUIT

 

 

PIN CONNECTIONS (top view)

 

 

LOGIC DIAGRAM/WAVEFORM

 

 

SWITCHING CHARACTERISTICS TEST CIRCUIT

 

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