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Home > products > Flash Memory IC Chip > FSQ510 digital integrated circuits Integrated Circuit Chip Green Mode Fairchild Power Switch

FSQ510 digital integrated circuits Integrated Circuit Chip Green Mode Fairchild Power Switch

Category:
Flash Memory IC Chip
Price:
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Specifications
Supply Voltage:
20 V
Startup Charging Current:
1.0 MA
Drain Pin Voltage:
700 V
Sync Pin Voltage:
-0.3 To 6.5 V
Maximum Junction Temperature:
+150 °C
Storage Temperature:
-55 To +150 °C
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chip in electronics

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small scale integrated circuits

Introduction

 
FSQ510, FSQ510H, and FSQ510M
Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter – Low EMI and High Efficiency
 
Features ƒ

  • Uses an LDMOS Integrated Power Switch ƒ
  • Optimized for Valley Switching Converter (VSC) ƒ
  • Low EMI through Variable Frequency Control and Inherent Frequency Modulation ƒ
  • High Efficiency through Minimum Drain Voltage Switching ƒ
  • Extended Valley Switching for Wide Load Ranges ƒ
  • Small Frequency Variation for Wide Load Ranges ƒ
  • Advanced Burst-Mode Operation for Low Standby Power Consumption ƒ
  • Pulse-by-Pulse Current Limit ƒ
  • Protection Functions: Overload Protection (OLP), Internal Thermal Shutdown (TSD) with Hysteresis ƒ Under-Voltage Lockout (UVLO) with Hysteresis ƒ
  • Internal Startup Circuit ƒ
  • Internal High-Voltage SenseFET: 700V ƒ
  • Built-in Soft-Start: 5ms

Applications ƒ
Auxiliary Power Supplies for LCD TV, LCD Monitor, Personal Computer, and White Goods
 
Description
A Valley Switching Converter (VSC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510 (H or M) is an integrated valley switching pulse width modulation (VSPWM) controller and SenseFET specifically designed for offline switch-mode power supplies (SMPS) for valley switching with minimal external components. The VS-PWM controller includes an integrated oscillator, under-voltage lockout (UVLO), leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller solutions, the FSQ510 (H or M) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a platform for cost-effective designs of a valley switching flyback converters.
 
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
 

SymbolParameterMin.Max.Unit
VSTRVstr Pin Voltage 500V
VDSDrain Pin Voltage 700V
VCCSupply Voltage 20V
VFBFeedback Voltage Range-0.3Internally Clamped(5)V
VSyncSync Pin Voltage-0.36.5V
PDTotal Power Dissipation7-DIP 1.38W
7-MLSOP
8-DIP 1.47
TJMaximum Junction Temperature +150°C
Recommended Operating Junction Temperature(6)-40+140
TSTGStorage Temperature-55+150°C

Notes:
5. VFB is internally clamped at 6.5V (ICLAMP_MAX<100uA) which has a tolerance between 6.2V and 7.2V.
6. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
 
Application Circuit

 
Internal Block Diagram

 
 
 
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MOQ:
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