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GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

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Specifications
Pulse Forward Current:
1 (100μs Pulse, 100pps) A
Reverse Voltage:
5 V
Junction Temperature:
125 °C
Collector−emitter Voltage:
55 V
Emitter−collector Voltage:
7 V
Collector Current:
50 MA
Storage Temperature Range:
−55~150 °C
Operating Temperature Range:
−55~100 °C
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Introduction

 

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP504A,TLP504A−2

 

Programmable Controllers AC / DC−Input Module Solid State Relay

 

The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.

 

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.) Rank GB: 100% (min.)

• Isolation voltage: 2500 Vrms (min.)

• UL recognized: UL1577,

                           File no. E67349

 

 

 

Pin Configurations (top view)

 

 

Absolute Maximum Ratings (Ta = 25°C)

         Characteristic   Symbol                        Rating   Unit
   TLP504A    TLP504A−2
 LED  Forward current    IF       60        50   mA
 Forward current derating  ΔIF / °C  −0.7 (Ta ≥ 39°C)  −0.5 (Ta ≥ 25°C)  mA /°C
 Pulse forward current   IFP            1 (100μs pulse, 100pps)   A
 Reverse voltage   VR                             5   V
 Junction temperature   Tj                           125  °C
Detector  Collector−emitter voltage  VCEO                            55   V
 Emitter−collector voltage  VECO                             7   V
 Collector current    IC                            50  mA
 Collector power dissipation (1 circuit)   PC       150       100  mW

 Collector power dissipation derating

 (1 circuit Ta ≥ 25°C)

 ΔPC / °C      -1.5       -1.0 mW /°C
 Junction temperature   Tj                         125   °C
  Storage temperature range   Tstg                      −55~150   °C
  Operating temperature range   Topr                      −55~100   °C
  Lead soldering temperature   Tsol                     260 (10 s)   °C
  Total package power dissipation   RT       250        150   mW

  Total package power dissipation derating

  (Ta ≥ 25°C)

 ΔPT / °C      -2.5        -1.5 mW / °C
  Isolation voltage   BVS

 2500 (AC, 1min., R.H.≤ 60%)

 (Note 1)

 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

 

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