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Home > products > Integrated Circuit Chips > New & Original Dual 1.5A-Peak Low-Side MOSFET Driver MIC4426BN

New & Original Dual 1.5A-Peak Low-Side MOSFET Driver MIC4426BN

manufacturer:
Manufacturer
Description:
Low-Side Gate Driver IC Inverting 8-PDIP
Category:
Integrated Circuit Chips
Price:
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Specifications
Supply Voltage:
+22V
Input Voltage:
VS + 0.3V To GND – 5V
Junction Temperature:
150°C
Storage Temperature:
–65°C To +150°C
Lead Temperature (10 Sec.):
300°C
Peak Output Current:
1.5A
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Introduction

 

MIC4426/4427/4428

Dual 1.5A-Peak Low-Side MOSFET Driver

 

General Description

The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output voltage levels that swing within 25mV of the positive supply or ground. Comparable bipolar devices are capable of swinging only to within 1V of the supply. The MIC4426/7/8 is available in three configurations: dual inverting, dual noninverting, and one inverting plus one noninverting output. The MIC4426/4427/4428 are pin-compatible replacements for the MIC426/427/428 and MIC1426/1427/1428 with improved electrical performance and rugged design (Refer to the Device Replacement lists on the following page). They can withstand up to 500mA of reverse current (either polarity) without latching and up to 5V noise spikes (either polarity) on ground pins.

 

Primarily intended for driving power MOSFETs, MIC4426/7/8 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak current, and fast switching time. Other applications include driving heavily loaded clock lines, coaxial cables, or piezoelectric transducers. The only load limitation is that total driver power dissipation must not exceed the limits of the package.

 

Features

• Bipolar/CMOS/DMOS construction

• Latch-up protection to >500mA reverse current

• 1.5A-peak output current

• 4.5V to 18V operating range

• Low quiescent supply current

  4mA at logic 1 input

  400µA at logic 0 input

• Switches 1000pF in 25ns

• Matched rise and rall times

• 7Ω output impedance

• < 40ns typical delay

• Logic-input threshold independent of supply voltage

• Logic-input protection to –5V

• 6pF typical equivalent input capacitance

• 25mV max. output offset from supply or ground

• Replaces MIC426/427/428 and MIC1426/1427/1428

• Dual inverting, dual noninverting, and inverting/ noninverting configurations

• ESD protection

 

Applications

• MOSFET driver

• Clock line driver

• Coax cable driver

• Piezoelectic transducer driver

 

Functional Diagram

 

Pin Configuration

 

 

Pin Description

 Pin Number        Pin Name     Pin Function
  1,8         NC   not internally connected
   2         INA   Control Input A: TTL/CMOS compatible logic input.
   3        GND   Ground
   4         INB   Control Input B: TTL/CMOS compatible logic input.
   5       OUTB   Output B: CMOS totem-pole output.
   6         VS   Supply Input: +4.5V to +18V
   7       OUTA   Output A: CMOS totem-pole output.

 

 

Absolute Maximum Ratings (Note 1)

Supply Voltage (VS) ....................................................+22V

Input Voltage (VIN) ......................... VS + 0.3V to GND – 5V

Junction Temperature (TJ) ........................................ 150°C

Storage Temperature ............................... –65°C to +150°C

Lead Temperature (10 sec.)...................................... 300°C

ESD Rating, Note 3

 

Operating Ratings (Note 2)

Supply Voltage (VS) ..................................... +4.5V to +18V

Temperature Range (TA)

    (A) ........................................................ –55°C to +125°C

    (B) .......................................................... –40°C to +85°C

Package Thermal Resistance

    PDIP θJA ............................................................130°C/W

    PDIP θJC .............................................................42°C/W

    SOIC θJA ...........................................................120°C/W

    SOIC θJC .............................................................75°C/W

    MSOP θJC ......................................................... 250°C/W

 

Test Circuits

 

 

 

 

 

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