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Home > products > Flash Memory IC Chip > Digital Attenuator Integrated Circuit Chip 30dB, 4-Bit DC - 2.0 GHz AT-220

Digital Attenuator Integrated Circuit Chip 30dB, 4-Bit DC - 2.0 GHz AT-220

manufacturer:
Manufacturer
Description:
RF Attenuators 20dB 0 Hz ~ 18 GHz 50 Ohms 1W SMA In-Line Module
Category:
Flash Memory IC Chip
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Low Intermodulation Product:
+50 DBm IP3
Low DC Power Consumption:
50 µW
Package:
Plastic SOIC-16
Temperature Stability +/-0.15 DB:
-40°C To +85°C
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Introduction

 

Digital Attenuator, 30 dB, 4-Bit DC-2.0 GHz   AT-220 

 

Features                                                                                 Functional Schematic

• Attenuation 2-dB Steps to 30 dB

• High Accuracy

• Low Intermodulation Product: +50 dBm IP3

• Low DC Power Consumption: 50 µW

• SOIC-16 Plastic Package

• Tape and Reel Packaging Available

• Temperature Stability +/-0.15 dB: -40°C to +85°C

 

Description

M/A-COM’s AT-220 is a 4-bit, 2-dB step GaAs MMIC digital attenuator in a low cost SOIC 16-lead surface mount plastic package. The AT-220 is ideally suited for use where high accuracy, fast switching, very low power consumption and low intermodulation products are required. Typical applications include radio and cellular equipment, wireless LANs, GPS equipment and other Gain/Level Control circuits.

The AT-220 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features

full chip passivation for increased performance and reliability.

 

Pin Configuration                                   

 Pin No.     Function   Pin No.     Function
   1     VC1    9     RF2
   2     VC1    10     GND
   3     VC2    11     GND
   4     VC2    12     GND
   5     VC3    13     GND
   6     VC3    14     GND
   7     VC4    15     GND
   8     VC4    16     RF1

 

Absolute Maximum Ratings 1

  Parameter   Absolute Maximum

  Input Power:

    50 MHz

  500-2000 MHz

 

  +27 dBm

  +34 dBm

   Control Voltage   -8.5 V ≤ VC ≤ 5V
  Operating Temperature   -40°C to +85°C
  Storage Temperature   -65°C to +150°C

1. Exceeding any one or combination of these limits may cause permanent

    damage to this device.

 

Electrical Specifications: TA = 25°C, VC = 0 V / −5 V, Z0 = 50 Ω

  Parameter    Test Conditions   Frequency   Units    Min   Typ   Max
 Insertion Loss (reference state)  

 DC - 0.5 GHz

 DC -1.0 GHz

 DC -2.0 GHz

 

 dB

 dB

 dB
 

  --

  --

  --

  1.5

  1.6

  1.8

  1.7

  1.8

   2.1

 Attenuation Accuracy 2  

DC -1.0 GHz

DC -2.0 GHz

 ± (0.15 dB + 3% of Atten  Setting in dB) dB

 ± (0.30 dB + 4% of Atten  Setting in dB) dB

  VSWR      Ratio   --   1.2:1   --
  Trise, Tfall   10% to 90% RF, 90% to 10% RF   --  nS   --   12   --
  Ton, Toff

   50% Control to 90% RF,

  50% Control to 10% RF

  --  nS   --   18   --
  Transients   In-Band   --  mV   --   25   --
  1 dB Compression

  Input Power

  Input Power

  0.05 GHz

 0.5 - 2.0 GHz

 dBm  dBm

  --

  --

  20

  28

  --

  --

   IP2

  Measured Relative to Input Power

 (For two-tone input power up to +5 dBm)

  0.05 GHz

 0.5 - 2.0 GHz

 dBm  dBm

  --

  --

  45

  68

  --

  --

   IP3

  Measured Relative to Input Power

 (For two-tone input power up to +5 dBm)

  0.05 GHz

 0.5 - 2.0 GHz

 dBm  dBm

  --

  --

  40

  50

  --

  --

  Control Current   |VC| = 5 V     µA   --     100

2. Attenuation accuracy specifications apply with negative bias control and low inductance grounding.

 

SOIC-16

 

 

Typical Performance Curves

 

 

 

 

 

 

 

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