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Home > products > Power Management ICs > M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory

M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory

manufacturer:
Manufacturer
Description:
IC FLASH 8MBIT SPI 75MHZ 8SO Micron Technology Inc.
Category:
Power Management ICs
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Storage Temperature:
–65 To 150 °C
Input And Output Voltage (with Respect To Ground):
–0.6 To VCC + 0.6 V
Supply Voltage:
–0.6 To 4.0 V
Electrostatic Discharge Voltage (Human Body Model):
–2000 To 2000 V
Input Leakage Current:
± 2 µA
Output Leakage Current:
± 2 µA
Highlight:

electronic integrated circuit

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linear integrated circuits

Introduction

 

M25PE80

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

 

Features

■ SPI bus compatible serial interface

■ 8-Mbit Page-Erasable Flash memory

■ Page size: 256 bytes

  – Page Write in 11 ms (typical)

  – Page Program in 0.8 ms (typical)

  – Page Erase in 10 ms (typical)

■ SubSector Erase (4 Kbytes)

■ Sector Erase (64 Kbytes)

■ Bulk Erase (8 Mbits)

 

■ 2.7 V to 3.6 V single supply voltage

■ 50 MHz clock rate (maximum)

■ Deep Power-down mode 1 µA (typical)

■ Electronic Signature

  – JEDEC standard two-byte signature (8014h)

■ Software Write Protection on a 64 Kbyte sector basis

■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 Write cycles

■ More than 20 year data retention

■ Packages – ECOPACK® (RoHS compliant)

 

 

 

Description

The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus.

 

The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

 

The memory is organized as 16 sectors that are further divided up into 16 subsectors each (256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes

 

The memory can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.

 

The memory can be Write Protected by either Hardware or Software using a mix of volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).

 

In order to meet environmental requirements, ST offers the M25PE80 in ECOPACK® packages. ECOPACK® packages are Lead-Free and RoHS compliant.

 

Absolute maximum ratings

Symbol Parameter Min Max Unit
TSTG Storage Temperature –65 150 °C
TLEAD Lead temperature during soldering   See (1)  
VIO Input and Output Voltage (with respect to Ground) –0.6 VCC + 0.6 V
VCC Supply Voltage –0.6 4.0 V
VESD Electrostatic Discharge Voltage (Human Body model)(2) –2000 2000 V

1. Compliant with JEDEC Std J-STD-020C (for small body, SnPb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).

 

 

 

 

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