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Home > products > Flash Memory IC Chip > MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

manufacturer:
Manufacturer
Description:
RF Amplifier IC ISM, PCS, WLL, 802.16/WiMax 50MHz ~ 1.3GHz 05 Plastic Package
Category:
Flash Memory IC Chip
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Device Current:
80 MA
Power Dissipation:
550 MW
RF Input Power:
+13 DBm
Junction Temperature:
150°C
Storage Temperature:
–65 To 150°C
Device Voltage Temperature Coefficient:
-8.0 MV/°C
Highlight:

electronic integrated circuit

,

linear integrated circuits

Introduction

 

Cascadable Silicon Bipolar MMIC Amplifier MSA-1105

 

Features

• High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block

• 3 dB Bandwidth: 50 MHz to 1.3 GHz

• 17.5 dBm Typical P1 dB at 0.5 GHz

• 3.6 dB Typical Noise Figure at 0.5 GHz

• Surface Mount Plastic Package

• Tape-and-Reel Packaging Option Available[1]


Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”

 

Description

The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.

 

The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

 

Typical Biasing Configuration

 

 

 

05 Plastic Package

 

 

MSA-1105 Absolute Maximum Ratings

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 550 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C

 

Thermal Resistance[2,4]: θjc = 125°C/W


Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 8 mW/°C for TC > 124°C.

4. See MEASUREMENTS section “Thermal Resistance” for more information.

 

05 Plastic Package Dimensions

 

 

 

 

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
MIC4680YM 11361 MICREL 12+ SOP-8
MIC5205YM5 22705 MICREL 13+ SOT23-5
MIC5239-3.3YM 11432 MICREL 16+ SOP-8
MIC5255-3.3BM5 11503 MICREL 05+ SOT23-5
MIC8115TUY 11574 MICREL 06+ SOT-143
MIC811SUY 31000 MICREL 15+ SOT-143
MICRF211AYQS 6387 MICROCHIP 15+ TSSOP-16
MINISMDC050F-2 12000 TYCO 15+ SMD
MJ15025G/MJ15024G 2300 ON 16+ TO-3
MJ4502 3598 ON 15+ TO-3
MJ802G 3846 ON 15+ TO-3
MJD122T4G 61000 ON 16+ TO-252
MJD44H11T4G 5681 ON 16+ TO-252
MJD45H11T4G 18545 ON 16+ TO-252
MJE13003 69000 CJ 16+ TO-126
MJE13005A 52000 ST 16+ TO-220
MJE15032G+MJE15033G 5000 ON 15+ TO-220
MJE15034G+MJE15035G 5000 ON 16+ TO-220
MJE2955T 19000 FSC 16+ TO-220
MJE3055T 20000 FSC 13+ TO-220
MJF122G 17254 ON 13+ TO-220F
MJW21193G+MJW21194G 2000 ON 16+ TO-247
MK20DX256VLH7 1714 FREESCALE 16+ LQFP-64
MK64FN1M0VLQ12 2929 FREESCALE 16+ LQFP-144
MLF1608DR68KTA00 6000 TDK 16+ SMD
MLF2012DR82KT000 30000 TDK 16+ SMD
MLG1608SR56JT000 16000 TDK 16+ SMD
MLX90614ESF-BAA-000-TU 3574 MELEXIS 16+ TO-39-4
MM58167BN 5465 NSC 14+ DIP-24
MM74C911N 4979 NSC 14+ DIP-28

 

 

 

 

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MOQ:
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