BTS721L1 Electronic IC Chips Smart Four Channel Highside Power Switch
electronic integrated circuit
,linear integrated circuits
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Maximum Ratings at Tj = 25°C unless otherwise specified
| Parameter | Symbol | Values | Unit |
| Supply voltage(overvoltage protection see page 4) | Vbb | 43 | V |
| Supply voltage for full short circuit protection Tj,start =-40 ...+150°C | Vbb | 34 | V |
| Load current (Short-circuit current, see page 5) | IL | self-limited | A |
| Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI 3) = 2 Ω, td = 200 ms; IN= low or high, each channel loaded with RL = 4.7Ω, | VLoad dump4) | 60 | V |
|
Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
|
Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: |
Ptot |
3.7 1.9 |
W |
|
Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C5), IL = 2.9 A, ZL = 58 mH, 0Ω one channel: IL = 4.3 A, ZL = 58 mH, 0Ω two parallel channels: IL = 6.3 A, ZL = 58 mH, 0Ω four parallel channels: |
EAS |
0.3 0.65 1.5 |
J |
| Electrostatic discharge capability (ESD) (Human Body Model) | VESD | 1.0 | kV |
|
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) |
VIN IIN IST |
-10 ... +16 ±2.0 ±5.0 |
V mA
|
|
Thermal resistance junction - soldering point5),6) each channel: junction - ambient5) one channel active: all channels active: |
Rthjs Rthja
|
15 41 34 |
K/W |
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15
6) Soldering point: upper side of solder edge of device pin 15. See page 15
Stock Offer (Hot Sell)
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