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Home > products > Power Management ICs > IR21091S Electronic IC Chips digital integrated circuits driver ic

IR21091S Electronic IC Chips digital integrated circuits driver ic

manufacturer:
Manufacturer
Description:
IC GATE DRVR HALF-BRIDGE 8SOIC
Category:
Power Management ICs
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
High Side Floating Absolute Voltage:
-0.3 To 625 V
Allowable Offset Supply Voltage Transient:
50 V/ns
Junction Temperature:
150°C
Storage Temperature:
-50 To 150°C
Lead Temperature (soldering, 10 Seconds):
300°C
Ambient Temperature:
-40 To 125 °C
Highlight:

electronic integrated circuit

,

linear integrated circuits

Introduction

 

Stock Offer (Hot Sell)

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IR21091(S) & (PbF)

HALF-BRIDGE DRIVER

 

Features

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V, 5V and 15V input logic compatible

 

• Cross-conduction prevention logic

• Matched propagation delay for both channels

• High side output in phase with IN input

• Logic and power ground +/- 5V offset.

 

• Internal 500ns dead-time, and programmable up to 5us with one external RDT resistor

• Lower di/dt gate driver for better noise immunity

• The dual function DT/SD pin input turns off both channels.

• Available in Lead-Free

 

Description

The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

 

The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

 

Product Summary

VOFFSET        600V max.

IO+/-              120 mA / 250 mA

VOUT             10 - 20V

ton/off (typ.)   680 & 170 ns

Dead time      500 ns

(programmable up to 5uS)

 

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min Max Units
VB High side floating absolute voltage -0.3 625 V
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 VCC + 0.3
DT/SD Programmable dead-time and shut-down pin voltage VSS - 0.3 VCC + 0.3
VIN Logic input voltage VSS - 0.3 VCC + 0.3
dVS/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8 Lead PDIP) - 1.0 W
(8 Lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 Lead PDIP) - 125 °C/W
(8 Lead SOIC) - 200
TJ Junction temperature - 150 °C
TS Storage temperature -50 150
TL Lead temperature (soldering, 10 seconds) - 300

 

Packages

 

 

Typical Connection

 

 

 

 

 

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Stock:
MOQ:
10pcs