SN74HC04N Electronic IC Chips integrated components Hex inverter
electronic integrated circuit
,linear integrated circuits
74HC04; 74HCT04
Hex inverter
FEATURES
• Complies with JEDEC standard no. 8-1A
• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
| SYMBOL | PARAMETER | CONDITIONS | TYPICAL | UNIT | |
| HC04 | HCT04 | ||||
| tPHL/tPLH | propagation delay nA to nY | CL = 15 pF; VCC = 5 V | 7 | 8 | ns |
| CI | input capacitance | 3.5 | 3.5 | pF | |
| CPD | power dissipation capacitance per gate | notes 1 and 2 | 21 | 24 | pF |
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For 74HC04: the condition is VI = GND to VCC.
For 74HCT04: the condition is VI = GND to VCC − 1.5 V.
Fig.1 Pin configuration DIP14, SO14 and (T)SSOP14.
Fig.2 Pin configuration DHVQFN14. Fig.3 Logic symbol.
Fig.4 IEC logic symbol. Fig.5 Logic diagram (one inverter).
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