FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module
thyristor diode module
,low voltage power mosfet
FGH40N60SMDF
600V, 40A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175℃
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.
Absolute Maximum Ratings
Symbol | Description | Ratings | Units |
VCES | Collector to Emitter Voltage | 600 | V |
VGES | Gate to Emitter Voltage | ± 20 | V |
IC | Collector Current @ TC = 25℃ | 80 | A |
Collector Current @ TC = 100℃ | 40 | A | |
ICM (1) | Pulsed Collector Current | 120 | A |
IF | Diode Forward Current @ TC = 25℃ | 40 | A |
Diode Forward Current @ TC = 100℃ | 20 | A | |
IFM (1) | Pulsed Diode Maximum Forward Current | 120 | A |
PD | Maximum Power Dissipation @ TC = 25℃ | 349 | W |
Maximum Power Dissipation @ TC = 100℃ | 174 | W | |
TJ | Operating Junction Temperature | -55 to +175 | ℃ |
Tstg | Storage Temperature Range | -55 to +175 | ℃ |
TL |
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds |
300 | ℃ |
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature.
Stock Offer (Hot Sell)
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