New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600B
low voltage power mosfet
,hybrid inverter circuit
40A TRIACS
MAIN FEATURES:
| Symbol | Value | Unit |
| IT(RMS) | 40 | A |
| VDRM/VRRM | 600 and 800 | V |
| IGT (Q1) | 50 | mA |
DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC power switching. They can be used as an ON/ OFF function in applications such as static relays, heating regulation, water heaters, induction motor starting circuits, welding equipment... or for phase control operation in high power motor speed controllers, soft start circuits...
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734).
| Symbol | Parameter | Value | Unit | ||
|
IT(RMS) |
RMS on-state current |
RD91 | Tc = 80°C | 40 | A |
| TOP3 | |||||
| TOP3 Ins. | Tc = 70°C | ||||
| ITSM |
Non repetitive surge peak on-state |
F = 60 Hz | t = 16.7 ms | 420 | A |
| F = 50 Hz | t = 20 ms | 400 | |||
| It | I t Value for fusing | tp = 10 ms | 880 | A s | |
| dI/dt |
Critical rate of rise of on-state current |
F = 120 Hz | Tj = 125°C | 50 | A/µs |
| VDSM/VRSM | Non repetitive surge peak off-state voltage | tp = 10 ms | Tj = 25°C |
VDRM/VRRM |
V |
| IGM | Peak gate current | tp = 20 µs | Tj = 125°C | 8 | V |
| PG(AV) | Average gate power dissipation | Tj = 125°C | 1 | W | |
|
Tstg |
Storage junction temperature range |
- 40 to + 150 |
°C | ||
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
| Symbol | Test Conditions | Quadrant | Value | Unit | |
| IGT (1) | VD = 12 V RL = 33 Ω |
I - II - III |
MAX. |
50 |
mA |
| VGT | ALL | MAX. | 1.3 | V | |
| VGD | VD = VDRM RL = 3.3 kΩ Tj = 125°C | ALL | MIN. | 0.2 | V |
| IH (2) | IT = 500 mA | MAX. | 80 | mA | |
| IL | IG = 1.2 IGT |
I - III - IV |
MAX. |
70 |
mA |
| dV/dt (2) | VD = 67 % VDRM gate open Tj = 125°C | MIN. | 500 | V/µs | |
| (dV/dt)c (2) | (dI/dt)c = 20 A/ms Tj = 125°C | MIN. | 10 | V/µs | |
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