Surface mount Si-Epitaxial PlanarTransistors BCP53
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 80 V 1.2 A 1.5 W Surface Mount SOT-223-4
Category:
Flash Memory IC Chip
Price:
negotiation
Payment Method:
T/T, Western Union, PayPal
Specifications
Power Dissipation – Verlustleistung:
1.3 W
Collector Current – Kollektorstrom (DC):
1 A
Peak Collector Current – Koll.-Spitzenstrom:
1.5 A
Peak Base Current – Basis-Spitzenstrom:
200 MA
Junction Temperature – Sperrschichttemperatur:
150℃
Storage Temperature – Lagerungstemperatur:
- 65…+ 150℃
Highlight:
npn smd transistor
,multi emitter transistor
Introduction
Power dissipation – Verlustleistung 1.3 W
Plastic case SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25℃) Grenzwerte (TA = 25℃)
| BCP 51 | BCP 52 | BCP 53 | ||
| Collector-Emitter-voltage B open | - VCE0 | 45 V | 60 V | 80 V |
| Collector-Base-voltage E open | - VCB0 | 45 V | 60 V | 100 V |
| Emitter-Base-voltage C open | - VEB0 | 5 V | ||
| Power dissipation – Verlustleistung | Ptot | 1.3 W 1 ) | ||
| Collector current – Kollektorstrom (DC) | - IC | 1 A | ||
| Peak Collector current – Koll.-Spitzenstrom | - ICM | 1.5 A | ||
| Peak Base current – Basis-Spitzenstrom | - IBM | 200 mA | ||
| Junction temperature – Sperrschichttemperatur | Tj | 150℃ | ||
| Storage temperature – Lagerungstemperatur | TS | - 65…+ 150℃ | ||
1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
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Stock:
MOQ:
10pcs