S1MB-13-F Power Mosfet Transistor 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
manufacturer:
Manufacturer
Description:
Diode 1000 V 1A Surface Mount SMB
Category:
Flash Memory IC Chip
Price:
Negotiate
Payment Method:
T/T, Western Union, MoneyGram Paypal
Specifications
Highlight:
Introduction
S1MB-13-F 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Lead Free Finish/RoHS Compliant
Mechanical Data
Case: SMA/SMB
Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating (Matte Tin Finish).
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number, See Page 3
Ordering Information: See Page 3
SMA Weight: 0.064 grams (approximate)
SMB Weight: 0.093 grams (approximate)
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
| Characteristic | Symbol | S1 A/AB | S1 B/BB | S1 D/DB | S1 G/GB | S1 J/JB | S1 K/KB | S1 M/MB | Unit |
|---|---|---|---|---|---|---|---|---|---|
|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Rectified Output Current @ TT = 100°C | IO | 1.0 | A | ||||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load | IFSM | 30 | A | ||||||
| Forward Voltage @ IF = 1.0A | VFM | 1.1 | V | ||||||
| Peak Reverse Leakage Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°C | IRM |
5.0 100 |
μA | ||||||
| Maximum Reverse Recovery Time (Note 4) | 2.0 | μs | |||||||
| Typical Total Capacitance (Note 1) | 10 | pF | |||||||
| Typical Thermal Resistance, Junction to Terminal (Note 2) | 30 | °C/W | |||||||
| Operating and Storage Temperature Range | Tj, TSTG | -65 to +150 | °C | ||||||
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