IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic
multi emitter transistor
,silicon power transistors
IRFP9240, SiHFP9240
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
PRODUCT SUMMARY
| VDS (V) | - 200 V | |
| RDS(on) (Max.) (Ω) | VGS = - 10 V | 0.50 |
| Qg (Max.) (nC) | 44 | |
| Qgs (nC) | 7.1 | |
| Qgd (nC) | 27 | |
| Configuration | Single | |
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - 200 | V | ||
| Gate-Source Voltage | VGS | ± 20 | V | ||
| Continuous Drain Current | VGS at - 10 V | TC = 25 °C | ID | - 12 | A |
| TC = 100 °C | - 7.5 | ||||
| Pulsed Drain Current a | IDM | -48 | A | ||
| Linear Derating Factor | 1.2 | W/°C | |||
| Single Pulse Avalanche Energy b | EAS | 790 | mJ | ||
| Repetitive Avalanche Current a | IAR | - 12 | A | ||
| Repetitive Avalanche Energy a | EAR | 15 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 150 | W | |
| Peak Diode Recovery dV/dt c | dV/dt | - 5.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | °C | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300 d | °C | ||
| Mounting Torque | 6-32 or M3 screw | 10 | lbf·in | ||
| 1.1 | N·m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, RG = 25 Ω, IAS = - 12 A (see fig. 12).
c. ISD ≤ - 12 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| MOC3020 | 4000 | FSC | 14+ | DIP |
| MX25L1005CMI-12G | 4000 | MXIC | 14+ | SOP-8 |
| NFM18CC222R1C3D | 4000 | 14+ | SMD | |
| OB2269AP | 4000 | OB | 16+ | DIP8 |
| P6SMB22A | 4000 | ON | 16+ | SMB |
| PIC18F2550-I/SP | 4000 | MICROCHIP | 13+ | DIP |
| RS1M | 4000 | PLINGSEMI | 15+ | SMA |
| SD4841 | 4000 | SILAN | 16+ | DIP |
| SFH610A-3 | 4000 | VISHAY | 16+ | DIP-4 |
| SK110 | 4000 | TSC | 14+ | SMB |
| SMCJ30A | 4000 | VISHAY | 14+ | VISHAY |
| SN65HVD11DR | 4000 | TI | 14+ | SOP-8 |
| SN75176BP | 4000 | TI | 16+ | DIP |
| SUM65N20-30 | 4000 | VISHAY | 16+ | TO-263 |
| TS5A3159DBVR | 4000 | TI | 13+ | SOT23-6 |
| H11F1 | 4001 | FSC | 15+ | DIP-6 |
| PS2561 | 4001 | NEC | 16+ | SOP4 |
| SP202ECP | 4001 | SIPEX | 16+ | DIP |
| EXB841 | 4002 | FUJI | 14+ | ZIP-13 |
| PC451 | 4002 | SHARP | 14+ | SOP-4 |
| SFH610A-3 | 4002 | VISKAY | 14+ | DIP-4 |
| HT9032C | 4008 | HOLTEK | 16+ | SOP |
| MJE15033G | 4008 | ON | 16+ | TO-220 |
| LF347 | 4022 | TI | 13+ | SOP14 |
| 1.5KE300CA | 8000 | VISHAY | 15+ | DO-201AD |
| ICS501 | 4100 | ICS | 16+ | SOP8 |
| IRFIZ34N | 4100 | IR | 16+ | TO-220F |
| NCP1396ADR2G | 4100 | ON | 14+ | SOP15 |
| ZTX712 | 4100 | ZETEX | 14+ | TO-92 |
| MBR20200 | 4110 | ON | 14+ | TO-220 |
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