IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET
power mosfet ic
,silicon power transistors
IRF640NPbF
IRF640NSPbF
IRF640NLPbF
HEXFET® Power MOSFET
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile application.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 18 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 13 | A |
| IDM | Pulsed Drain Current | 72 | A |
| PD @TC = 25°C | Power Dissipation | 150 | W |
| Linear Derating Factor | 1.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 247 | mJ |
| IAR | Avalanche Current | 18 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 8.1 | V/ns |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbfïin (1.1Nïm) |
Stock Offer (Hot Sell)
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| SII9002CSU | 11138 | SILICON | 16+ | TSSOP-48 |
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| SP3238EEA-L/TR | 23236 | SIPEX | 13+ | TSSOP-28 |
| ST3243CTR | 6276 | ST | 14+ | TSSOP-28 |
| STP16CP05TTR | 17940 | ST | 16+ | TSSOP-24 |
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| STM8S003F3P6TR | 13558 | ST | 16+ | TSSOP-20 |
| STM8S103F3P6TR | 2016 | ST | 16+ | TSSOP-20 |
| UDA1334ATS/N2 | 33744 | 16+ | TSSOP-16 | |
| SC2440TETRT | 15316 | SEMTECH | 08+ | TSSOP-16 |
| ST3232CTR | 5180 | ST | 11+ | TSSOP-16 |
| ST3232EBTR | 12444 | ST | 07+ | TSSOP-16 |
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| STPIC6C595TTR | 5140 | ST | 07+ | TSSOP-16 |
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