NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor
power mosfet ic
,multi emitter transistor
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V
RDS(ON) = 0.2 W @ VGS=-10 V.
►Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior thermal
and electrical capabilities.
►High density cell design for extremely low RDS(ON).
►Exceptional on-resistance and maximum DC current capability.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
| Symbol | Parameter | NDS356AP | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage - Continuous | ±20 | V |
| ID | Maximum Drain Current - Continuous | ±1.1 | A |
| PD | Maximum Power Dissipation | 0.5 | W |
| TJ ,TSTG | Operating and Storage Temperature Range | -55 to 150 | °C |
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