Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
bridge rectifier circuit
,signal schottky diode
Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
Feature
Low coat construction
Low forward voltage drop
Low reverse leakageHigh forward surge current capability
High temperature soldering guaranteed:
260℃/10 secods/.375”(9.5mm)lead leCM GROUPh at 5 lbs(2.3kg) tension
MECHANICAL DATA
Case: Transfer molded plastic
poxy: UL94V-O rate flame retardant
Polarity: Color band denotes cathode end
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C
Mounting position: Any
Weight: 0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
· Ratings at 25OC ambient temperature unless otherwise specified · Single Phase, half wave, 60Hz, resistive or inductive load · For capacitive load derate current by 20%
| Maximum RMS Voltage | SYMBOLS | 1N4001 | 1N4002 | 1N4003 | 1N4004 | 1N4005 | 1N4006 | 1N4007 | UNIT |
| Maximum DC Blocking Voltage |
Vrrm |
50 | 100 | 200 |
400 |
600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current 0.375”(9.5mm) lead leCM GROUPh at TA= 25℃ | Vrms | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 100 | V |
| Maximum Instantaneous Forward Voltage @ 1.0A | (Av) | 1.0 | A | ||||||
|
Maximum DC Reverse TA = 25℃ Current at Rated DC Blocking TA=100V Voltage per element |
Ifsm | 5.0 | µA | ||||||
| Vf | 50 | µA | |||||||
| Maximum Full Load Reverse Current, full cycle average 0.375”(9.5mm)lead leCM GROUPh at TL=75℃ | Ir | 30 | µA | ||||||
| Typical Junction Capacitance (Note 1) | Cj | 13 | µA | ||||||
| Typical Thermal Resistance (Note 2) | RθJA | 50 | ℃ /w | ||||||
| Operating Junction Temperature Range | Tj | -55 to +150 | ℃ | ||||||
| Storage Temperature Range | TSTG | -55 to +150 | ℃ | ||||||
Notes:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm2 copper pads to each terminal.
3. The chip size is 40mil×40mil
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