Triple 3-input NOR gate high-speed Si-gate CMOS devices Output capability 74HC27D,653
manufacturer:
Manufacturer
Description:
NOR Gate IC 3 Channel 14-SO
Category:
Integrated Circuit Chips
Price:
Negotiation
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T/T, Western Union,PayPal
Specifications
Storage Temperature:
-55 To +150 °C
Operating Temperature:
-55 To +100 °C
Wave Solder Temperature (see Page 14 For Reflow Solder Profiles):
260 For 10 Sec °C
Total Device Power Dissipation @ TA = 25°C Derate Above 25°C:
250 MW
DC/Average Forward Input Current:
100 (non-M), 60 (-M) MA
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Introduction
Triple 3-input NOR gate 74HC/HCT27
FEATURES
• Output capability: standard
• ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT27 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT27 provide the 3-input NOR function.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW): PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fO) where: fi = input frequency in MHz fo = output frequency in MHz ∑ (CL × VCC2 × fo) = sum of outputs CL = output load capacitance in pF VCC = supply voltage in V
2. For HC the condition is VI = GND to VCC For HCT the condition is VI = GND to VCC − 1.5 V
| SYMBOL | PARAMETER | CONDITIONS |
TYPICAL
|
UNIT | |
| HC | HCT | ||||
| tPHL/ tPLH | propagation delay nA, nB, nC to nY | CL = 15 pF; VCC = 5 V | 8 | 10 | ns |
| CI | input capacitance | 3.5 | 3.5 | pF | |
| CPD | power dissipation capacitance per gate | notes 1 and 2 | 24 | 30 | pF |
AC WAVEFORMS
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