XCF32P Programmable IC Chips programmable circuit board ic components
ic programmer circuit
,programmable audio chip
Platform Flash In-System Programmable Configuration PROMs
Features
• In-System Programmable PROMs for Configuration of Xilinx® FPGAs
• Low-Power Advanced CMOS NOR Flash Process
• Endurance of 20,000 Program/Erase Cycles
• Operation over Full Industrial Temperature Range (–40°C to +85°C)
• IEEE Standard 1149.1/1532 Boundary-Scan (JTAG) Support for Programming, Prototyping, and Testing
• JTAG Command Initiation of Standard FPGA Configuration
• Cascadable for Storing Longer or Multiple Bitstreams
• Dedicated Boundary-Scan (JTAG) I/O Power Supply (VCCJ)
• I/O Pins Compatible with Voltage Levels Ranging From 1.8V to 3.3V
• Design Support Using the Xilinx ISE® Alliance and Foundation™ Software Packages
• XCF01S/XCF02S/XCF04S
• 3.3V Supply Voltage
• Serial FPGA Configuration Interface
• Available in Small-Footprint VO20 and VOG20 Packages
• XCF08P/XCF16P/XCF32P
• 1.8V Supply Voltage
• Serial or Parallel FPGA Configuration Interface
• Available in Small-Footprint VOG48, FS48, and FSG48 Packages
• Design Revision Technology Enables Storing and Accessing Multiple Design Revisions
for Configuration
• Built-In Data Decompressor Compatible with Xilinx Advanced Compression Technology
Description
Xilinx introduces the Platform Flash series of in-system programmable configuration PROMs. Available in 1 to 32 Mb densities, these PROMs provide an easy-to-use, cost-effective, and reprogrammable method for storing large Xilinx FPGA configuration bitstreams. The Platform Flash PROM series includes both the 3.3V XCFxxS PROM and the 1.8V XCFxxP PROM.
The XCFxxS version includes 4 Mb, 2 Mb, and 1 Mb PROMs that support Master Serial and Slave Serial FPGA configuration modes (Figure 1). The XCFxxP version includes 32 Mb, 16 Mb, and 8 Mb PROMs that support Master Serial, Slave Serial, Master SelectMAP, and Slave SelectMAP FPGA configuration modes (Figure 2).
Absolute Maximum Ratings
| Symbol | Description | XCF01S, XCF02S, XCF04S | XCF08P, XCF16P, XCF32P | Units | |
| VCCINT | Internal supply voltage relative to GND | –0.5 to +4.0 | –0.5 to +2.7 | V | |
| VCCO | I/O supply voltage relative to GND | –0.5 to +4.0 | –0.5 to +4.0 | V | |
| VCCJ | JTAG I/O supply voltage relative to GND | –0.5 to +4.0 | –0.5 to +4.0 | V | |
| VIN | Input voltage with respect to GND | VCCO < 2.5V | –0.5 to +3.6 | –0.5 to +3.6 | V |
| VCCO ≥ 2.5V | –0.5 to +5.5 | –0.5 to +3.6 | V | ||
| VTS | Voltage applied to High-Z output | VCCO < 2.5V | –0.5 to +3.6 | –0.5 to +3.6 | V |
| VCCO ≥ 2.5V | –0.5 to +5.5 | –0.5 to +3.6 | V | ||
| TSTG | Storage temperature (ambient) | –65 to +150 | –65 to +150 | °C | |
| TJ | Junction temperature | +125 | +125 | °C | |
Notes:
1. Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA, whichever is easier to achieve. During transitions, the device pins can undershoot to –2.0V or overshoot to +7.0V, provided this overshoot or undershoot lasts less then 10 ns and with the forcing current being limited to 200 mA.
2. Stresses beyond those listed under Absolute Maximum Ratings might cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time adversely affects device reliability.
3. For soldering guidelines, see the information on "Packaging and Thermal Characteristics" at www.xilinx.com.
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