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Home > products > Flash Memory IC Chip > M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

manufacturer:
Manufacturer
Description:
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 48-TSOP
Category:
Flash Memory IC Chip
Price:
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Specifications
Temperature Under Bias:
–50 To 125 °C
Storage Temperature:
–65 To 150 °C
Input Or Output Voltage:
–0.6 To VCC +0.6 V
Supply Voltage:
–0.6 To 4 V
Identification Voltage:
–0.6 To 13.5 V
Program Voltage:
–0.6 To 13.5 V
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programming ic chips

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programmable audio chip

Introduction

 

 

M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

 

Features summary

• Supply Voltage

  – VCC = 2.7V to 3.6V for Program, Erase, Read

  – VPP =12 V for Fast Program (optional)

• Asynchronous Random/Page Read

  – Page Width: 4 Words

  – Page Access: 25ns

  – Random Access: 60ns, 70ns

• Programming Time

  – 10 µs per Byte/Word typical

  – 4 Words/8 Bytes Program

• 135 memory blocks

  – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)

  – 127 Main Blocks, 64 KBytes each

• Program/Erase Controller

  – Embedded Byte/Word Program algorithms

• Program/Erase Suspend and Resume

  – Read from any Block during Program Suspend

  – Read and Program another Block during Erase Suspend

• Unlock Bypass Program command

  – Faster Production/Batch Programming

• VPP/WP pin for Fast Program and Write Protect

• Temporary Block Unprotection mode

• Common Flash Interface

  – 64-bit Security Code

• Extended Memory Block

  – Extra block used as security block or to store additional information

• Low power consumption

  – Standby and Automatic Standby

• 100,000 Program/Erase cycles per block

• Electronic Signature

  – Manufacturer Code: 0020h

 

Maximum rating

Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

 

Absolute Maximum Ratings

Symbol Parameter Min Max Unit
TBIAS Temperature Under Bias –50 125 °C
TSTG Storage Temperature -65 150 °C
VIO Input or Output Voltage(1)(2) –0.6 VCC +0.6 V
VCC Supply Voltage –0.6 4 V
VID Identification Voltage –0.6 13.5 V
VPP (3) Program Voltage –0.6 13.5 V

1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.

2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.

3. VPP must not remain at 12V for more than a total of 80hrs.

 

Packages

 

 

Logic Diagram

 

 

TSOP Connections

 

 

TFBGA48 Connections (Top view through package)

 

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