TLP251(F) Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC
electronics ic chip
,integrated circuit ic
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP251F
Inverter for Air Conditioner
Induction Heating
Transistor Inverter
Power MOSFET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector.
This unit is 8−lead DIP package.
TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A)
• Input threshold current: IF = 5mA (max.)
• Supply current: 11mA (max.)
• Supply voltage: 10~35V
• Output peak current: ±0.4A (max.)
• Switching time: tpHL, tpLH = 1μs (max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file no. E67349
• Option (D4) type VDE approved:
DIN EN 60747-5-2, certificate no. 40011913
Maximum operating insulation voltage: 1140VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”
• Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
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