ILQ2 Integrated Circuit Chip Optocoupler , Phototransistor Output
electronics ic chip
,integrated circuit ic
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Current Transfer Ratio at IF = 10 mA
• Isolation Test Voltage, 5300 VRMS
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J, Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
• FIMKO
Description
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output.
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation.
The ILD1/ 2/ 5 has two isolated channels in a single DIP package and the ILQ1/ 2/ 5 has four isolated channels per package.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
| Parameter | Test condition | Symbol | Value | Unit | |
|---|---|---|---|---|---|
| Input | |||||
| Reverse voltage | VR | 6.0 | V | ||
| Forward current | IF | 60 | mA | ||
| Surge current | IFSM | 2.5 | A | ||
| Power dissipation | Pdiss | 100 | mW | ||
| Derate linearly from 25 °C | 1.3 | mW/°C | |||
| Output | |||||
| Collector-emitter reverse voltage | ILD1 | VCER | 50 | V | |
| ILQ1 | VCER | 50 | V | ||
| ILD2 | VCER | 70 | V | ||
| ILQ2 | VCER | 70 | V | ||
| ILD5 | VCER | 70 | V | ||
| ILQ5 | VCER | 70 | V | ||
| Collector current | IC | 50 | mA | ||
| t < 1.0 ms | IC | 400 | mA | ||
| Power dissipation | Pdiss | 200 | mW | ||
| Derate linearly from 25 °C | 2.6 | mW/°C | |||
| Coupler | |||||
| Isolation test voltage (between emitter and detector referred to standard climate 25 °C/ 50 % RH, DIN 50014) | VISO | 5300 | VRMS | ||
| Creepage | ≥ 7.0 | mm | |||
| Clearance | ≥ 7.0 | mm | |||
| Isolation resistance | VIO = 500 V, Tamb = 25 °C | RIO | 1012 | Ω | |
| VIO = 500 V, Tamb = 100 °C | RIO | 1011 | Ω | ||
| Package power dissipation | Ptot | 250 | mW | ||
| Derate linearly from 25 °C | 3.3 | mW/°C | |||
| Storage temperature | Tstg | - 40 to + 150 | °C | ||
| Operating temperature | Tamb | - 40 to + 100 | °C | ||
| Junction temperature | Tj | 100 | °C | ||
| Soldering temperature | 2.0 mm from case bottom | Tsld | 260 | °C | |
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