512 Kbit 1 Mbit 2 Mbit Many Time Programmable Flash led Integrated Circuit Chip SST27SF512-70-3C-PGE

512 Kbit 1 Mbit 2 Mbit Many Time Programmable Flash led Integrated Circuit Chip SST27SF512-70-3C-PGE

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8

• 4.5-5.5V Read Operation

• Superior Reliability

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

• Fast Read Access Time – 70 ns

• Fast Byte-Program Operation

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

1.4 seconds (typical) for SST27SF512

2.8 seconds (typical) for SST27SF010

5.6 seconds (typical) for SST27SF020

PRODUCT DESCRIPTION

The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST’s proprietary, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories.

Featuring high-performance Byte-Program, the SST27SF512/010/020 provide a Byte-Program time of 20 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years.

The SST27SF512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . -65°C to +150°C D. C.

Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . .  .-0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . ..-2.0V to VDD+2.0Ｖ

Voltage on A9 and VPP Pin to Ground Potential . . . . .. . . . . . . . . -0.5V to 14.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . 1.0W

Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . .. . . . . 300°C

Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

STOCK LIST