BFS505,115 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
manufacturer:
NXP
Description:
RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount SC-70
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union ， ESCROW
Specifications
Categories:
Transistors - Bipolar (BJT) - RF
Voltage - Collector Emitter Breakdown (Max):
15V
Frequency - Transition:
9GHz
Noise Figure (dB Typ @ F):
1.2dB ~ 2.1dB @ 900MHz
Power - Max:
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 6V
Current - Collector (Ic) (Max):
18mA
Operating Temperature:
175°C (TJ)
Highlight:
resistor equipped transistor
,silicon npn power transistors
Introduction
BFS505 NPN PNP Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount
NPN 9 GHz wideband transistor
FEATURES
• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - Bipolar (BJT) - RF | |
| Manufacturer | USA Inc. |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2.1dB @ 900MHz |
| Gain | - |
| Power - Max | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 6V |
| Current - Collector (Ic) (Max) | 18mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SOT-323-3 |
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Stock:
MOQ:
3000 PCS