IRFP9240 General Purpose Rectifier Diode P Channel With 150W Through Hole
manufacturer:
Vishay
Description:
P-Channel 200 V 12A (Tc) 150W (Tc) Through Hole TO-247AC
Category:
Electronic Components
Price:
Negotiation
Payment Method:
T/T, Western Union ， ESCROW
Specifications
Categories:
Transistors - FETs, MOSFETs - Single
Drain To Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Rds On (Max) @ Id, Vgs:
500 MOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1200pF @ 25V
Power Dissipation (Max):
150W (Tc)
Highlight:
high current schottky diode
,low power zener diode
Introduction
IRFP9240 General Purpose Rectifier Diode P-Channel 200V 12A (Tc) 150W (Tc) Through Hole
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
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Stock:
MOQ:
10 PCS