IRF3205PBF Mosfet Power Transistor 175°C Operating Temperature Ultra Low On - Resistance
manufacturer:
Manufacturer
Description:
N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220AB
Category:
Flash Memory IC Chip
Price:
Negotiate
Payment Method:
T/T, Western Union，Paypal
Specifications
Series:
IRF3205PbF
Application:
Fast Switching Speed And Ruggedized Device
Package:
TO-220
Name:
Mosfet Power Transistor
Highlight:
n channel mosfet transisto
,p channel mosfet transistor
Introduction
IRF3205PbF HEXFET® Power MOSFET 55V 98A TO-220 MOSFET Transistors
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
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Stock:
MOQ:
10pcs