Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General
high speed mosfet transistor
,p channel mosfet transistor
IRFR5305TRPBF Transistor TO252 55V 31A Power MOSFET for Power Circuit General
IRFR5305PbF
IRFU5305PbF
Description
Fifth Generation HEXFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter |
Max. |
Units |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ -10V |
-31 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ -10V |
-22 |
|
IDM |
Pulsed Drain Current |

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