SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
mosfet motor control circuit
,n channel mos field effect transistor
SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
FEATURES
- TrenchFET® power MOSFETs
- Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
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PRODUCT SUMMARY |
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VDS (V) |
RDS(on) () |
ID (A) |
|
-60 |
0.0145 at VGS = -10 V |
-14.4 |
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0.0190 at VGS = -4.5 V |
-12.6 |
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ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) |
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PARAMETER |
SYMBOL |
10 s |
STEADY STATE |
UNIT |
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Drain-Source Voltage |
VDS |
-60 |
V |
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Gate-Source Voltage |
VGS |
± 20 |
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Continuous Drain Current (TJ = 150 °C) a |
TA =25°C |
ID |
-14.4 |
-8.6 |
A |
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TA =70°C |
-11.5 |
-6.9 |
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Pulsed Drain Current |
IDM |
-60 |
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Continuous Source Current (Diode Conduction) a |
IS |
-4.5 |
-1.6 |
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Avalanche Current |
L = 0.1 mH |
IAS |
50 |
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Single Pulse Avalanche Energy |
EAS |
125 |
mJ |
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Maximum Power Dissipation a |
TA =25°C |
PD |
5.4 |
1.9 |
W |
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TA =70°C |
3.4 |
1.2 |
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Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55 to +150 |
°C |
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Soldering Recommendations (Peak Temperature) b, c |
260 |
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THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
TYPICAL |
MAXIMUM |
UNIT |
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Maximum Junction-to-Ambient a |
t 10 s |
RthJA |
18 |
23 |
°C/W |
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Steady State |
52 |
65 |
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Maximum Junction-to-Case (Drain) |
Steady State |
RthJC |
1 |
1.3 |
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