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Home > products > Flash Memory IC Chip > SI7139DP-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs PowerPAK SO-8

SI7139DP-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs PowerPAK SO-8

manufacturer:
Manufacturer
Description:
MOSFET P-CH 60V 8.6A PPAK SO-8
Category:
Flash Memory IC Chip
Price:
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Payment Method:
Paypal, Western Union, TT
Specifications
Unit Weight:
0.017870 Oz
Part # Aliases:
SI7139DP-GE3
Typical Turn-On Delay Time:
17 Ns
Typical Turn-Off Delay Time:
56 Ns
Subcategory:
MOSFETs
Rise Time:
12 Ns
Highlight:

mosfet motor control circuit

,

n channel mos field effect transistor

Introduction

SI7139DP-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs PowerPAK SO-8

 

FEATURES

  • TrenchFET® power MOSFET

  • 100 % Rg and UIS tested

• Material categorization:

 

APPLICATIONS

• Notebook computer

- Adaptor switch
- Battery switch
- Load switch

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

Qg (TYP.)

-30

0.0055 at VGS = -10 V

-40 d

49.5 nC

0.0090 at VGS = -4.5 V

-40 d

 

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC =25°C

ID

-40 d

A

TC =70°C

-40 d

TA =25°C

-22.4 a, b

TA =70°C

-17.9 a, b

Pulsed Drain Current

IDM

-70

Continuous Source-Drain Diode Current

TC =25°C

IS

-40 d

TA =25°C

-4.5 a, b

Avalanche Current

L = 0.1 mH

IAS

30

Single-Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC =25°C

PD

48

W

TC =70°C

30

TA =25°C

5 a, b

TA =70°C

3.2 a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) e, f

 

260

 

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, c

t  10 s

RthJA

20

25

°C/W

Maximum Junction-to-Case

Steady State

RthJC

2.1

2.6

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