CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET
mosfet motor control circuit
,n channel mos field effect transistor
CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET
1 Features
- Low Qg and Qgd
-
Low RDS(on)
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
-
Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
-
Optimized for Synchronous FET Applications
3 Description
This 1.9 mΩ, 30 V, SON 3×3 NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5V) | 23 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | |
| RDS(on) | Drain-to-Source On- Resistance | VGS = 4.5 V | 2.6 | mΩ |
| VGS =10V | 1.9 | |||
| Vth | Threshold Voltage | 1.4 |
V |
|
Ordering Information
|
Device |
Media |
Qty |
Package |
Ship |
|
CSD17575Q3 |
13-Inch Reel |
2500 |
SON 3.3 × 3.3 mm Plastic Package |
Tape and Reel |
|
CSD17575Q3T |
13-Inch Reel |
250 |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current (Package Limit) |
60 |
A |
|
Continuous Drain Current (Silicon Limit), TC = 25°C |
182 |
||
|
Continuous Drain Current(1) |
27 |
||
|
IDM |
Pulsed Drain Current(2) |
240 |
A |
|
PD |
Power Dissipation(1) |
2.8 |
W |
|
Power Dissipation, TC = 25°C |
108 |
||
|
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, single pulse ID =48,L=0.1mH,RG =25Ω |
115 |
mJ |
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