CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs
mosfet motor control circuit
,n channel mos field effect transistor
CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs
1 Features
- Extremely Low Resistance
-
Ultra-Low Qg and Qgd
-
Low-Thermal Resistance
-
Avalanche Rated
-
Lead-Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5-mm × 6-mm Plastic Package
2 Applications
-
Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
-
Synchronous Rectification
-
Active ORing and Hotswap Applications
3 Description
This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
|
Qg |
Gate Charge Total (4.5 V) |
30 |
nC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
7.5 |
nC |
|
|
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 4.5 V |
1.5 |
mΩ |
|
VGS =10V |
1.2 |
|||
|
VGS(th) |
Threshold Voltage |
1.4 |
V |
|
Device Information
|
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD17556Q5B |
2500 |
13-Inch Reel |
SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
|
CSD17556Q5BT |
250 |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current (Package Limited) |
100 |
A |
|
Continuous Drain Current (Silicon Limited), TC = 25°C |
215 |
||
|
Continuous Drain Current(1) |
34 |
||
|
IDM |
Pulsed Drain Current, TA = 25°C(1)(2) |
400 |
A |
|
PD |
Power Dissipation(1) |
3.1 |
W |
|
Power Dissipation, TC = 25°C |
191 |
||
|
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, Single Pulse ID =100A,L=0.1mH,RG =25Ω |
500 |
mJ |
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