CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm
mosfet motor control circuit
,n channel mos field effect transistor
CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm
1 Features
- Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Lead-Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 2-mm × 2-mm Plastic Package
2 Applications
-
Optimized for Load Switch Applications
-
Storage, Tablets, and Handheld Devices
-
Optimized for Control FET Applications
-
Point of Load Synchronous Buck Converters
3 Description
This 12-V, 7.5-mΩ NexFETTM power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.
Product Summary
|
TA = 25°C |
TYPICAL VAUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
12 |
V |
|
|
Qg |
Gate Charge Total (4.5 V) |
5.1 |
nC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
0.76 |
nC |
|
|
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 2.5 V |
9.1 |
mΩ |
|
VGS = 4.5 V |
7.5 |
|||
|
VGS(th) |
Threshold Voltage |
0.8 |
V |
|
Device Information
|
DEVICE |
MEDIA |
QTY |
PACKAGE |
SHIP |
|
CSD13202Q2 |
7-Inch Reel |
3000 |
SON 2.00-mm × 2.00-mm Plastic Package |
Tape and Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
12 |
V |
|
VGS |
Gate-to-Source Voltage |
±8 |
V |
|
ID |
Continuous Drain Current (Package Limit) |
22 |
A |
|
Continuous Drain Current(1) |
14.4 |
||
|
IDM |
Pulsed Drain Current, TA = 25°C(2) |
76 |
A |
|
PD |
Power Dissipation(1) |
2.7 |
W |
|
TJ, TSTG |
Operating Junction, Storage Temperature |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, Single Pulse ID =20A,L=0.1mH,RG =25Ω |
20 |
mJ |