CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance
p channel mosfet driver circuit
,mosfet motor control circuit
CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET
1 Features
- Optimized for 5-V Gate Drive
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
VSON 3.3 mm × 3.3 mm Plastic Package
2 Applications
-
Notebook Point of Load
-
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
3 Description
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Product Summary
|
TA = 25°C |
VALUE |
UNIT |
||
|
VDS |
Drain-to-source voltage |
30 |
V |
|
|
Qg |
Gate charge total (4.5 V) |
3.9 |
nC |
|
|
Qgd |
Gate charge gate to drain |
0.8 |
nC |
|
|
RDS(on) |
Drain-to-source on resistance |
VGS = 3 V |
12.5 |
mΩ |
|
VGS = 4.5 V |
9.4 |
mΩ |
||
|
VGS = 8 V |
8.2 |
mΩ |
||
|
VGS(th) |
Threshold voltage |
1.3 |
V |
|
Ordering Information
|
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD17308Q3 |
2500 |
13-Inch Reel |
SON 3.3 mm × 3.3 mm Plastic Package |
Tape and Reel |
Absolute Maximum Ratings
|
TA = 25°C unless otherwise stated |
VALUE |
UNIT |
|
|
VDS |
Drain-to-source voltage |
30 |
V |
|
VGS |
Gate-to-source voltage |
+10 / –8 |
V |
|
ID |
Continuous Drain Current (Package Limited) |
50 |
A |
|
Continuous drain current, TC = 25°C |
44 |
||
|
Continuous drain current(1) |
14 |
||
|
IDM |
Pulsed drain current, TA = 25°C(2) |
167 |
A |
|
PD |
Power dissipation(1) |
2.7 |
W |
|
Power Dissipation, TC = 25°C |
28 |
||
|
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche energy, single pulse ID =36A,L=0.1mH,RG =25Ω |
65 |
mJ |