STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
manufacturer:
Manufacturer
Description:
MOSFET N-CH 80V 110A TO220
Category:
Flash Memory IC Chip
Price:
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Payment Method:
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Specifications
Pd - Power Dissipation:
200 W
Maximum Operating Temperature:
+ 175 C
Minimum Operating Temperature:
- 55 C
Qg - Gate Charge:
150 NC
Vgs - Gate-Source Voltage:
10 V
Vgs Th - Gate-Source Threshold Voltage:
2.5 V
Highlight:
mosfet motor control circuit
,n channel mos field effect transistor
Introduction
STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
Features
|
Order code |
VDS |
RDS(on)max |
ID |
PTOT |
|
STP110N8F6 |
80 V |
0.0065 Ω |
110 A |
200 W |
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFETTM F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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