STP55NF06 Mosfet Power Transistor MOSFET N-Ch 60 Volt 55 Amp
manufacturer:
Manufacturer
Description:
MOSFET N-CH 60V 50A TO220AB
Category:
Flash Memory IC Chip
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Specifications
Rds On - Drain-Source Resistance:
18 MOhms
Vgs Th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
44.5 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Highlight:
mosfet motor control circuit
,n channel mos field effect transistor
Introduction
STP55NF06 Mosfet Power Transistor MOSFET N-Ch 60 Volt 55 Amp
Features
| Order code | VDSS | RDS(on) max. | ID |
| STB55NF06 | 60 V | < 0.018 Ω | 50 A |
| STP55NF06 | |||
| STP55NF06FP |
1. Refer to soa for the max allowable current value on FP-type due to Rth value
- 100% avalanche tested
- Exceptional dv/dt capability
Applications
- Switching application
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC- DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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