MURS120T3G Mosfet Power Transistor Rectifiers 200V 1A Ultrafast
p channel mosfet driver circuit
,mosfet motor control circuit
MURS120T3G Mosfet Power Transistor Rectifiers 200V 1A Ultrafast
Features
-
Small Compact Surface Mountable Package with J−Bend Leads
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Rectangular Package for Automated Handling
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High Temperature Glass Passivated Junction
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Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
-
NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Mechanical Characteristics:
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Case: Epoxy, Molded
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Weight: 95 mg (Approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
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Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
-
Polarity: Polarity Band Indicates Cathode Lead
-
ESD Rating:
♦ HumanBodyModel=3B(>8kV) ♦ MachineModel=C(>400V)
-
MAXIMUM RATINGS
|
Rating |
Symbol |
MURS/SURS8/NRVUS |
Unit |
|||||
|
105T3 |
110T3 |
115T3 |
120T3 |
140T3 |
160T3 |
|||
|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
50 |
100 |
150 |
200 |
400 |
600 |
V |
|
Average Rectified Forward Current |
IF(AV) |
1.0 @ TL = 155°C 2.0 @ TL = 145°C |
1.0 @ TL = 150°C 2.0 @ TL = 125°C |
A |
||||
|
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM |
40 |
35 |
A |
||||
|
Operating Junction Temperature |
TJ |
*65 to +175 |
°C |
|||||
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