FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate
manufacturer:
Manufacturer
Description:
N-Channel 100 V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
Category:
Flash Memory IC Chip
Price:
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Payment Method:
Paypal, Western Union, TT
Specifications
Unit Weight:
0.003175 Oz
Product Type:
MOSFET
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Channel Mode:
Enhancement
Configuration:
Single
Highlight:
p channel mosfet driver circuit
,n channel mos field effect transistor
Introduction
FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET
Features
- Shielded Gate MOSFET Technology
- MaxrDS(on) =4.2mΩat VGS =10V,ID =44A
- MaxrDS(on) =12mΩat VGS =6V,ID =22A
- ADD
- 50%
- lower Qrr than other MOSFET suppliers Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC Motor Drive
- Solar
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