FDV301N Digital Mosfet Power Transistor N-Ch ON Semiconductor 25 V 0.22 A Continuous
manufacturer:
Manufacturer
Description:
N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Category:
Flash Memory IC Chip
Price:
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Payment Method:
Paypal, Western Union, TT
Specifications
Unit Weight:
0.001093 Oz
Product Type:
MOSFET
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
Highlight:
p channel mosfet driver circuit
,mosfet motor control circuit
Introduction
FDV301N Mosfet Power Transistor MOSFET N-Ch Digital
Features
- 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) =5Ω@VGS=2.7V
- RDS(ON) = 4 Ω @ VGS= 4.5 V.
- Very low level gate drive requirements allowing direct
- operation in 3V circuits. VGS(th) < 1.06V.
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
- Replace multiple NPN digital transistors with one DMOS FET.
General Description
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
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