FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench
manufacturer:
Manufacturer
Description:
N-Channel 100 V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Category:
Flash Memory IC Chip
Price:
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Payment Method:
Paypal, Western Union, TT
Specifications
Unit Weight:
0.002402 Oz
Product Type:
MOSFET
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 155 C
Rds On - Drain-Source Resistance:
14.8 MOhms
Vgs - Gate-Source Voltage:
20 V
Highlight:
p channel mosfet driver circuit
,n channel mos field effect transistor
Introduction
FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench
Features
- Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
- Advanced Package and Silicon combination for low rDS(on)
- MSL1 robust package design
- 100% UIL Tested
- RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- DC - DC Conversion
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