FDC3535 Fast Speed Mosfet Transistor Circuits , Mosfet Motor Control Circuit
Specifications
Unit Weight:
0.001270 Oz
Product Type:
MOSFET
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Pd - Power Dissipation:
1.6 W
Highlight:
p channel mosfet driver circuit
,n channel mos field effect transistor
Introduction
FDC3535 Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench
Features
- MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A
- MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1.9A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Load Switch
- Synchronous Rectifier
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